The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Jul. 26, 2010
Takashi Miyoshi, Anan, JP;
Takashi Miyoshi, Anan, JP;
Nichia Corporation, Anan-shi, JP;
Abstract
A nitride semiconductor laser diode includes a substrate, an n-side nitride semiconductor layer formed on the substrate, an active layer formed on the n-side nitride semiconductor layer and having a light emitting layer including InAlGaN (0<x<1, 0 y<1, 0<x+y<1), and a p-side nitride semiconductor layer formed on the active layer. In the nitride semiconductor laser diode, the lasing wavelength of the nitride semiconductor laser diode is 500 nm or greater, dislocations originated in the active layer penetrate through the p-side nitride semiconductor layer, with the dislocation density in the p-side nitride semiconductor layer being 1×10cmor greater, and the concentration distribution of p-type impurities in the depth direction is such that, from the light emitting layer toward the surface of the p-side nitride semiconductor layer, the concentration of the p-type impurity reaches a maximum value of 5×10cmor greater within a range of 300 nm from the top portion of the light emitting layer which is closest to the p-side nitride semiconductor layer, and after reaching the maximum value, the concentration remains at 6×10cmor greater in the above-described range of 300 nm.