The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2013

Filed:

Feb. 07, 2011
Applicants:

Motoi Takahashi, Yokohama, JP;

Yasuharu Sato, Yokohama, JP;

Inventors:

Motoi Takahashi, Yokohama, JP;

Yasuharu Sato, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory includes a plurality of nonvolatile memory cells arranged in a matrix and coupled to control gate lines, selection gate lines, bit lines, and source lines, and includes a source line control unit. The source line control unit, at a time of program operation, sets one of the source lines coupled to a row of the memory cells including a program memory cell to a high level voltage, and sets at least one of the remaining source lines coupled to a row of a non-program memory cells to be higher than a low level voltage of the selection gate lines and to be lower than the high level voltage of an unselection bit line. Thereby, a leak current lowering a voltage of the source lines at the time of program operation can be blocked off, and a program operation time may be shortened.


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