The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Nov. 29, 2011
Chan Wook Baik, Seongnam-si, KR;
Jong Seok Kim, Hwaseong-si, KR;
Seong Chan Jun, Seoul, KR;
Sun IL Kim, Seoul, KR;
Jong Min Kim, Suwon-si, KR;
Chan Bong Jun, Seoul, KR;
Sang Hun Lee, Seoul, KR;
Chan Wook Baik, Seongnam-si, KR;
Jong Seok Kim, Hwaseong-si, KR;
Seong Chan Jun, Seoul, KR;
Sun Il Kim, Seoul, KR;
Jong Min Kim, Suwon-si, KR;
Chan Bong Jun, Seoul, KR;
Sang Hun Lee, Seoul, KR;
Abstract
A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate.