The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Sep. 16, 2010
Hongyan Yan, San Diego, CA (US);
Janakiram Ganesh Sankaranarayanan, San Diego, CA (US);
Bhushan Shanti Asuri, San Diego, CA (US);
Himanshu Khatri, San Diego, CA (US);
Vinod V. Panikkath, San Diego, CA (US);
Hongyan Yan, San Diego, CA (US);
Janakiram Ganesh Sankaranarayanan, San Diego, CA (US);
Bhushan Shanti Asuri, San Diego, CA (US);
Himanshu Khatri, San Diego, CA (US);
Vinod V. Panikkath, San Diego, CA (US);
QUALCOMM, Incorporated, San Diego, CA (US);
Abstract
In a first aspect, an RF switch includes a main transistor and a gate-to-source shorting circuit. When the RF switch is turned off, the gate-to-source shorting circuit is turned on to short the source and gate of the main transistor together, thereby preventing a Vgs from developing that would cause the main transistor to leak. When the RF switch is turned on, the gate-to-source shorting circuit is turned off to decouple the source from the gate. The gate is supplied with a digital logic high voltage to turn on the main transistor. In a second aspect, an RF switch includes a main transistor that has a bulk terminal. When the RF switch is turned off, the bulk is connected to ground through a high resistance. When the RF switch is turned on, the source and bulk are shorted together thereby reducing the threshold voltage of the main transistor.