The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2013

Filed:

Feb. 02, 2012
Applicant:

Mark Allen Itzler, Princeton, NJ (US);

Inventor:

Mark Allen Itzler, Princeton, NJ (US);

Assignee:

Princeton Lightwave, Inc., Cranbury, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

Avalanche photodiodes and methods for forming them are disclosed. The breakdown voltage of an avalanche photodiode is controlled through the inclusion of a diffusion sink that is formed at the same time as the device region of the photodiode. The device region and diffusion sink are formed by diffusing a dopant into a semiconductor to form a p-n junction in the device region. The dopant is diffused through a first diffusion window to form the device region and a second diffusion window to form the diffusion sink. The depth of the p-n junction is based on an attribute of the second diffusion window.


Find Patent Forward Citations

Itzler, Mark. (2013). Avalanche photodiode having controlled breakdown voltage (U.S. Patent No. 8513755). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8513755

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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