The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Feb. 09, 2012
Hiroshi Nakamura, Fujisawa, JP;
Kenichi Imamiya, Tokyo, JP;
Hiroshi Nakamura, Fujisawa, JP;
Kenichi Imamiya, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In an EEPROM consisting of a NAND cell in which a plurality of memory cells are connected in series, the control gate voltage Vof the memory cell in a block selected by the data read operation is made different from the each of the voltages V, Vof the select gate of the select transistor in the selected block so as to make it possible to achieve a high speed reading without bringing about the breakdown of the insulating film interposed between the select gate and the channel of the select transistor. The high speed reading can also be made possible in the DINOR cell, the AND cell, NOR cell and the NAND cell having a single memory cell connected thereto, if the control gate voltage of the memory cell is made different from the voltage of the select gate of the select transistor.