The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Jan. 28, 2011
Yoshitaka Ueda, Ogaki, JP;
Kouichi Yamada, Gifu, JP;
Atsushi Wada, Ogaki, JP;
Shigeto Kobayashi, Gifu, JP;
Yoshitaka Ueda, Ogaki, JP;
Kouichi Yamada, Gifu, JP;
Atsushi Wada, Ogaki, JP;
Shigeto Kobayashi, Gifu, JP;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
A MOS transistor includes a gate electrode formed in a grid pattern, source regions and drain regions each surrounded by the gate electrode, and a source metal wiring connected to the source regions via source contacts and a drain metal wiring connected to the drain regions via drain contacts. The source metal wiring and the drain metal wiring are disposed along one direction of the grid of the gate electrode. Each of the source regions and the drain regions is a rectangular form having its long side along the length direction of each metal wiring. The source metal wiring and the drain metal wiring are each formed in a zigzag manner in the length direction and are respectively connected to the source contacts and the drain contacts.