The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Sep. 23, 2010
Denis Kunz, Malsch, DE;
Markus Widenmeyer, Schoenaich, DE;
Alexander Martin, Regensburg, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A gas-sensitive semiconductor device having a semiconductive channel () which is delimited by a first () and a second () channel electrode, and having a gate electrode () which is associated with the channel and which cooperates with the channel in such a way that a change in conductivity of the channel () occurs as a response to an action of a gas. The gate electrode () and/or a gate insulation layer () which insulates the gate electrode from the channel, and/or a gate stack layer () which may be provided between the gate electrode and the channel have/has two surface sections () which differ in their sensitivity to gases.