The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Jan. 31, 2006
Osamu Maeda, Kanagawa, JP;
Tsuyoshi Fujimoto, Miyagi, JP;
Motonobu Takeya, Miyagi, JP;
Toshihiro Hashidu, Miyagi, JP;
Masaki Shiozaki, Kanagawa, JP;
Yoshio Oofuji, Miyagi, JP;
Osamu Maeda, Kanagawa, JP;
Tsuyoshi Fujimoto, Miyagi, JP;
Motonobu Takeya, Miyagi, JP;
Toshihiro Hashidu, Miyagi, JP;
Masaki Shiozaki, Kanagawa, JP;
Yoshio Oofuji, Miyagi, JP;
Sony Corporation, Tokyo, JP;
Abstract
An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a first average dislocation density, one or more high defect regions having a second average dislocation density higher than the first average dislocation density are included; and a Group III-V nitride semiconductor layer which is formed on the substrate, has a plurality of light emitting device structures, and has a groove in the region including the region corresponding to the high defect region (high defect region).