The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Sep. 01, 2011
Applicants:
Tobin J. Marks, Evanston, IL (US);
Antonio Facchetti, Chicago, IL (US);
Paul D. Byrne, Lowell, MA (US);
Hyun Sung Kim, Seoul, KR;
Inventors:
Tobin J. Marks, Evanston, IL (US);
Antonio Facchetti, Chicago, IL (US);
Paul D. Byrne, Lowell, MA (US);
Hyun Sung Kim, Seoul, KR;
Assignee:
Northwestern University, Evanston, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
Abstract
Thin film transistor devices comprising a dielectric component and an inorganic semiconductor component coupled thereto, wherein said coupled inorganic semiconductor component is obtainable by a process that comprises contact of said dielectric component and a fluid medium comprising said inorganic semiconductor component.