The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Jan. 08, 2009
Applicants:
Eun Kyung Lee, Suwon-si, KR;
Byoung Lyong Choi, Seoul, KR;
Gyeong Su Park, Suwon-si, KR;
Jai Yong Han, Suwon-si, KR;
Inventors:
Eun Kyung Lee, Suwon-si, KR;
Byoung Lyong Choi, Seoul, KR;
Gyeong Su Park, Suwon-si, KR;
Jai Yong Han, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed herein is a nanowire including silicon rich oxide and a method for producing the same. The nanowire exhibits excellent electrically conducting properties and optical characteristics, and therefore is effectively used in a variety of applications including, for example, solar cells, sensors, photodetectors, light emitting diodes, laser diodes, EL devices, PL devices, CL devices, FETs, CTFs, surface plasmon waveguides, MOS capacitors and the like.