The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Nov. 14, 2006
Takahiro Morikawa, Hachioji, JP;
Motoyasu Terao, Hinodemachi, JP;
Norikatsu Takaura, Tokyo, JP;
Kenzo Kurotsuchi, Kodaira, JP;
Takahiro Morikawa, Hachioji, JP;
Motoyasu Terao, Hinodemachi, JP;
Norikatsu Takaura, Tokyo, JP;
Kenzo Kurotsuchi, Kodaira, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
On the same semiconductor substrate, a memory cell array in which a plurality of memory elements R having a chalcogenide-material storage layerstoring a high-resistance state with a high electric resistance value and a low-resistance state with a low electric resistance value by a change of an atom arrangement are disposed in a matrix is formed in a memory cell region mmry, and a semiconductor integrated circuit is formed in a logic circuit region lgc. This chalcogenide-material storage layeris made of a chalcogenide material containing at least either one of Ga or In of 10.5 atom % or larger to 40 atom % or smaller, Ge of 5 atom % or larger to 35 atom % or smaller, Sb of 5 atom % or larger to 25 atom % or smaller, and Te of 40 atom % or larger to 65 atom % or smaller.