The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2013

Filed:

Oct. 18, 2011
Applicants:

Laurent Souriau, Heverlee, BE;

Valentina Terzieva, Bertem, BE;

Inventors:

Laurent Souriau, Heverlee, BE;

Valentina Terzieva, Bertem, BE;

Assignee:

IMEC, Leuven, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides an etching solution for revealing defects in a germanium layer, a method for revealing defects in a germanium layer using such an etching solution and to a method for making such an etching solution. The etching solution according to embodiments of the present invention is able to exhibit an etch rate of between 4 nm·minand 450 nm·min, which makes it suitable to be used for revealing defects in a thin layer of germanium, i.e. in a layer of germanium with a thickness of between 20 nm and 10 μm, for example between 20 nm and 2 μm, between 20 nm and 1 μm or between 20 nm and 200 nm.


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