The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2013

Filed:

Oct. 04, 2011
Applicants:

Eun Shil Park, Guri-si, KR;

Yong Seok Eun, Seongnam-si, KR;

Kyong Bong Rouh, Icheon-si, KR;

Inventors:

Eun Shil Park, Guri-si, KR;

Yong Seok Eun, Seongnam-si, KR;

Kyong Bong Rouh, Icheon-si, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract

A buried junction is formed in a vertical transistor of a semiconductor device. Wall bodies are formed from a semiconductor substrate, the wall bodies protruding while having a first side surface and a second side surface in the opposite side of the first side surface; forming a one side contact mask having an opening which selectively opens a portion of the first side surface of the wall body; and forming a first impurity layer and a second impurity layer surrounding the first impurity layer by diffusing impurities having different diffusivities into the portion of the first side surface exposed to the opening.


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