The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8513101 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 20, 2013

Filed:

Sep. 16, 2009
Applicants:

Eun-kyung Lee, Suwon-si, KR;

Dong-mok Whang, Suwon-si, KR;

Byoung-lyong Choi, Seoul, KR;

Byung-sung Kim, Suwon-si, KR;

Inventors:

Eun-kyung Lee, Suwon-si, KR;

Dong-mok Whang, Suwon-si, KR;

Byoung-lyong Choi, Seoul, KR;

Byung-sung Kim, Suwon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/00 (2006.01); C30B 23/00 (2006.01); C30B 25/00 (2006.01); C30B 28/12 (2006.01); C30B 28/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition ('CVD') method.


Find Patent Forward Citations

Lee, Eun-kyung. (2013). Method of synthesizing nanowires (U.S. Patent No. 8513101). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8513101

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