The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Jun. 15, 2010
Raghu Nath Bhattacharya, Littleton, CO (US);
Sovannary Phok, Lakewood, CO (US);
Philip Anthony Parilla, Lakewood, CO (US);
Raghu Nath Bhattacharya, Littleton, CO (US);
Sovannary Phok, Lakewood, CO (US);
Philip Anthony Parilla, Lakewood, CO (US);
U.S. Department of Energy, Washington, DC (US);
Abstract
A Bi—Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.