The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2013

Filed:

Nov. 29, 2012
Applicant:

Sanyo Electric Co., Ltd, Moriguchi, JP;

Inventors:

Hiroyuki Kannou, Kishiwada, JP;

Masaki Shima, Uji, JP;

Assignee:

Sanyo Electric Co., Ltd., Moriguchi, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In accordance with the present invention, the dividing groovesare formed so as not to be parallel to cleavage planes of the semiconductor substrate, and the semiconductor substrateis bent along the dividing grooves, whereby the semiconductor substrateis fractured along the dividing grooves


Find Patent Forward Citations

Kannou, Hiroyuki. (2013). Method for fracturing semiconductor substrate, method for fracturing solar cell, and the solar cell (U.S. Patent No. 8513047). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8513047

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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