The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Jan. 13, 2012
Mickael Renault, San Jose, CA (US);
Joseph Damian Gordon Lacey, Milpitas, CA (US);
Vikram Joshi, Mountian View, CA (US);
Thomas L. Maguire, Sunnyvale, CA (US);
Mickael Renault, San Jose, CA (US);
Joseph Damian Gordon Lacey, Milpitas, CA (US);
Vikram Joshi, Mountian View, CA (US);
Thomas L. Maguire, Sunnyvale, CA (US);
Cavendish Kinetics Inc., San Jose, CA (US);
Abstract
The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.