The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Apr. 16, 2010
Gabriel Walter, Champaign, IL (US);
Nick Holonyak, Jr., Urbana, IL (US);
Milton Feng, Champaign, IL (US);
Chao-hsin Wu, Champaign, IL (US);
Gabriel Walter, Champaign, IL (US);
Nick Holonyak, Jr., Urbana, IL (US);
Milton Feng, Champaign, IL (US);
Chao-Hsin Wu, Champaign, IL (US);
Quantum Electro Opto Systems Sdn. Bhd., Melaka, MY;
The Board of Trustees of The University of Illilnois, Urbana, IL (US);
Abstract
A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween.