The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2013

Filed:

Mar. 25, 2011
Applicants:

Kyoung Lae Cho, Yongin-si, KR;

Hyuck-sun Kwon, Seoul, KR;

Jun Jin Kong, Yongin-si, KR;

Inventors:

Kyoung Lae Cho, Yongin-si, KR;

Hyuck-Sun Kwon, Seoul, KR;

Jun Jin Kong, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory device includes a memory cell array including a plurality of multi-level cells each storing data corresponding to one of a plurality of states of a first group of states, and a control circuit. The control circuit is configured to program data corresponding to one of the plurality of states in a first multi-level cell according to a first verify voltage level of a first group of verify voltage levels, and to control the first multi-level cell to be re-programmed to one of a plurality of states of a second group of states according to a first verify voltage level of a second group of verify voltage levels. Each voltage level of the second group of verify voltage levels has a higher level than the verify voltage levels of the first group of verify voltage levels.


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