The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8508015 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 13, 2013

Filed:

May. 19, 2008
Applicants:

Martin Ward Allen, Christchurch, NZ;

Steven Michael Durbin, Christchurch, NZ;

Inventors:

Martin Ward Allen, Christchurch, NZ;

Steven Michael Durbin, Christchurch, NZ;

Assignee:

Canterprise Limited, Christchurch, NZ;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides Schottky-like and ohmic contacts comprising metal oxides on zinc oxide substrates and a method of forming such contacts. The metal oxide Schottky-like and ohmic contacts may be formed on zinc oxide substrates using various deposition and lift-off photolithographic techniques. The barrier heights of the metal oxide Schottky-like contacts are significantly higher than those for plain metals and their ideality factors are very close to the image force controlled limit. The contacts may have application in diodes, power electronics, FET transistors and related structures, and in various optoelectronic devices, such as UV photodetectors.


Find Patent Forward Citations

Allen, Martin. (2013). Schottky-like contact and method of fabrication (U.S. Patent No. 8508015). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8508015

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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