The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2013

Filed:

May. 22, 2012
Applicants:

Kaizhong Gao, Eden Prairie, MN (US);

Haiwen Xi, Prior Lake, MN (US);

Wenzhong Zhu, Apple Valley, MN (US);

Olle Heinonen, Eden Prairie, MN (US);

Inventors:

Kaizhong Gao, Eden Prairie, MN (US);

Haiwen Xi, Prior Lake, MN (US);

Wenzhong Zhu, Apple Valley, MN (US);

Olle Heinonen, Eden Prairie, MN (US);

Assignee:

Seagate Technology LLC, Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01R 33/02 (2006.01); G01C 11/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.


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