The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2013

Filed:

Jul. 01, 2011
Applicants:

Hyeon-woo Jang, Incheon, KR;

Bong-soo Kim, Seongnam-si, KR;

Chae-ho Lim, Seoul, KR;

Hyo-sun Min, Suwon-si, KR;

Inventors:

Hyeon-Woo Jang, Incheon, KR;

Bong-Soo Kim, Seongnam-si, KR;

Chae-Ho Lim, Seoul, KR;

Hyo-Sun Min, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a substrate including a cell area and a peripheral area, the cell area having an active region defined by an isolation region, a cell gate structure below an upper surface of the substrate in the cell area, the cell gate crossing the active region, a bit line structure above an upper surface of the substrate in the cell area, the bit line structure including bit line offset spacers on at least two side surfaces thereof, and a peripheral gate structure above an upper surface of the substrate in the peripheral area, the peripheral gate structure including peripheral gate offset spacers and peripheral gate spacers on at least two side surfaces thereof.


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