The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Jan. 30, 2009
Applicants:
Dmitri B. Strukov, Menlo Park, CA (US);
Philip J. Kuekes, Menlo Park, CA (US);
Duncan Stewart, Ottawa, CA;
Zhiyong LI, Redwood City, CA (US);
Inventors:
Dmitri B. Strukov, Menlo Park, CA (US);
Philip J. Kuekes, Menlo Park, CA (US);
Duncan Stewart, Ottawa, CA;
Zhiyong Li, Redwood City, CA (US);
Assignee:
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory device () includes a semiconductor wire including a source region (), a drain region (), and a channel region () between the source region () and the drain region (). A gate structure that overlies the channel region includes a memristive portion () and a conductive portion () overlying the memristive portion ().