The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Oct. 01, 2010
Kazutoshi Izumi, Kawasaki, JP;
Hitoshi Saito, Kawasaki, JP;
Naoya Sashida, Kawasaki, JP;
Kaoru Saigoh, Kawasaki, JP;
Kouichi Nagai, Kawasaki, JP;
Kazutoshi Izumi, Kawasaki, JP;
Hitoshi Saito, Kawasaki, JP;
Naoya Sashida, Kawasaki, JP;
Kaoru Saigoh, Kawasaki, JP;
Kouichi Nagai, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
An insulation film () having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor () is formed. Thereafter, an alumina film () is formed on the insulation film (). According to the method, low coverage of the alumina film () does not become a problem, and the ferroelectric capacitor () is reliably protected.