The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Mar. 04, 2011
Yeh-jen Huang, Hsinchu, TW;
Yeh-ning Jou, Taipei County, TW;
Ming-dou Ker, Hsinchu County, TW;
Wen-yi Chen, Taipei, TW;
Chia-wei Hung, Nantou County, TW;
Hwa-chyi Chiou, Hsinchu, TW;
Yeh-Jen Huang, Hsinchu, TW;
Yeh-Ning Jou, Taipei County, TW;
Ming-Dou Ker, Hsinchu County, TW;
Wen-Yi Chen, Taipei, TW;
Chia-Wei Hung, Nantou County, TW;
Hwa-Chyi Chiou, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
An electrostatic discharge (ESD) protection device including a substrate, a first doped region, a second doped region, and a third doped region, a gate and a plurality of contacts is disclosed. The substrate includes a first conductive type. The first doped region is formed in the substrate and includes a second conductive type. The second doped region is formed in the substrate and includes the second conductive type. The third doped region is formed in the substrate, includes the first conductive type and is located between the first and the second doped regions. The gate is formed on the substrate, located between the first and the second doped regions and comprises a first through hole. The contacts pass through the first through hole to contact with the third doped region.