The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Jun. 16, 2008
Patrick N. Grillot, San Jose, CA (US);
Rafael I. Aldaz, Santa Clara, CA (US);
Eugene I. Chen, Palo Alto, CA (US);
Sateria Salim, San Jose, CA (US);
Patrick N. Grillot, San Jose, CA (US);
Rafael I. Aldaz, Santa Clara, CA (US);
Eugene I. Chen, Palo Alto, CA (US);
Sateria Salim, San Jose, CA (US);
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
One or more regions of graded composition are included in a III-P light emitting device, to reduce the Vassociated with interfaces in the device. In accordance with embodiments of the invention, a semiconductor structure comprises a III-P light emitting layer disposed between an n-type region and a p-type region. A graded region is disposed between the p-type region and a GaP window layer. The aluminum composition is graded in the graded region. The graded region may have a thickness of at least 150 nm. In some embodiments, in addition to or instead of a graded region between the p-type region and the GaP window layer, the aluminum composition is graded in a graded region disposed between an etch stop layer and the n-type region.