The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Jul. 05, 2011
Satoshi Kawamoto, Okayama, JP;
Masaki Nakamura, Okayama, JP;
Satoshi Kawamoto, Okayama, JP;
Masaki Nakamura, Okayama, JP;
Mitsui Engineering & Shipbuilding Co., Ltd., Tokyo, JP;
Admap Inc., Okayama, JP;
Abstract
Disclosed is a silicon carbide substrate which has less high frequency loss and excellent heat dissipating characteristics. The silicon carbide substrate (S) is provided with a first silicon carbide layer (), which is composed of a polycrystalline silicon carbide, and a second silicon carbide layer (), which is composed of polycrystalline silicon carbide formed on the surface of the first silicon carbide layer. The second silicon carbide layer () has a high-frequency loss smaller than that of the first silicon carbide layer (), the first silicon carbide layer () has a thermal conductivity higher than that of the second silicon carbide layer (), and on the surface side of the second silicon carbide layer (), the high-frequency loss at a frequency of 20 GHz is 2 dB/mm or less, and the thermal conductivity is 200 W/mK or more.