The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Aug. 15, 2011
Byoung-keon Park, Yongin, KR;
Jin-wook Seo, Yongin, KR;
Ki-yong Lee, Yongin, KR;
Dong-hyun Lee, Yongin, KR;
Kil-won Lee, Yongin, KR;
Jong-ryuk Park, Yongin, KR;
Yun-mo Chung, Yongin, KR;
Tak-young Lee, Yongin, KR;
Byung-soo SO, Yongin, KR;
Min-jae Jeong, Yongin, KR;
Seung-kyu Park, Yongin, KR;
Yong-duck Son, Yongin, KR;
Jae-wan Jung, Yongin, KR;
Byoung-Keon Park, Yongin, KR;
Jin-Wook Seo, Yongin, KR;
Ki-Yong Lee, Yongin, KR;
Dong-Hyun Lee, Yongin, KR;
Kil-Won Lee, Yongin, KR;
Jong-Ryuk Park, Yongin, KR;
Yun-Mo Chung, Yongin, KR;
Tak-Young Lee, Yongin, KR;
Byung-Soo So, Yongin, KR;
Min-Jae Jeong, Yongin, KR;
Seung-Kyu Park, Yongin, KR;
Yong-Duck Son, Yongin, KR;
Jae-Wan Jung, Yongin, KR;
Samsung Display Co., Ltd., Yongin, Gyeongg-Do, KR;
Abstract
A thin film transistor includes a substrate, a semiconductor layer provided on the substrate and crystallized by using a metal catalyst, a gate electrode insulated from and disposed on the semiconductor layer, and a getter layer disposed between the semiconductor layer and the gate electrode and formed with a metal oxide having a diffusion coefficient that is less than that of the metal catalyst in the semiconductor layer.