The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Dec. 30, 2009
Dong-hyun Lee, Yongin, KR;
Ki-yong Lee, Yongin, KR;
Jin-wook Seo, Yongin, KR;
Tae-hoon Yang, Yongin, KR;
Maxim Lisachenko, Yongin, KR;
Byoung-keon Park, Yongin, KR;
Kil-won Lee, Yongin, KR;
Jae-wan Jung, Yongin, KR;
Dong-Hyun Lee, Yongin, KR;
Ki-Yong Lee, Yongin, KR;
Jin-Wook Seo, Yongin, KR;
Tae-Hoon Yang, Yongin, KR;
Maxim Lisachenko, Yongin, KR;
Byoung-Keon Park, Yongin, KR;
Kil-Won Lee, Yongin, KR;
Jae-Wan Jung, Yongin, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device equipped with the thin film transistor of which the thin film transistor includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer and a second semiconductor layer disposed on the buffer layer, a gate electrode insulated from the first semiconductor layer and the second semiconductor layer, a gate insulating layer insulating the gate electrode from the first semiconductor layer and the second semiconductor layer, and source and drain electrodes insulated from the gate electrode and partially connected to the second semiconductor layer, wherein the second semiconductor layer is disposed on the first semiconductor layer.