The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Dec. 04, 2009
Sung-ho Park, Yongin-si, KR;
I-hun Song, Seongnam-si, KR;
Wook Lee, Anyang-si, KR;
Sang-wook Kim, Yongin-si, KR;
Sun-il Kim, Yongin-si, KR;
Jae-chul Park, Seoul, KR;
Sung-ho Park, Yongin-si, KR;
I-hun Song, Seongnam-si, KR;
Wook Lee, Anyang-si, KR;
Sang-wook Kim, Yongin-si, KR;
Sun-il Kim, Yongin-si, KR;
Jae-chul Park, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a complementary metal oxide semiconductor (CMOS) image sensor having a structure capable of increasing areas of photodiodes in unit pixels and expanding light receiving areas of the photodiodes. In the CMOS image sensor, transfer transistors may be formed on the photodiode, and reset transistors, source follower transistors, and selection transistors may be formed on a layer on which the transfer transistors are not formed. In such a CMOS image sensor, the areas of the photodiodes may be increased in unit pixels so that a size of the unit pixels may be reduced and sensitivity of the pixel may be improved.