The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8507888 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 13, 2013

Filed:

Feb. 01, 2011
Applicants:

Kenji Aoyama, Kanagawa-ken, JP;

Kazuhiko Yamamoto, Kanagawa-ken, JP;

Satoshi Ishikawa, Kanagawa-ken, JP;

Shigeto Oshino, Kanagawa-ken, JP;

Inventors:

Kenji Aoyama, Kanagawa-ken, JP;

Kazuhiko Yamamoto, Kanagawa-ken, JP;

Satoshi Ishikawa, Kanagawa-ken, JP;

Shigeto Oshino, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a nonvolatile memory device includes a selection element layer and a nanomaterial aggregate layer. The selection element layer includes silicon. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer includes a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies. At least a surface of the fine particle is made of an insulating material other than silicon oxide.


Find Patent Forward Citations

Aoyama, Kenji. (2013). Nonvolatile memory device and method for manufacturing same (U.S. Patent No. 8507888). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8507888

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