The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Jul. 14, 2010
Lucien Date, Ottignies LLN, BE;
Paul William Turnbull, Morpeth, GB;
Lucien Date, Ottignies LLN, BE;
Paul William Turnbull, Morpeth, GB;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for forming a dielectric layer on a substrate are provided herein. In some embodiments a method for forming a dielectric layer on a substrate may include exposing the substrate to a first source gas comprising a silicon precursor and an oxidizer for a first period of time to form a first layer comprising silicon and oxygen; and exposing the substrate to a second source gas comprising a metal precursor and the silicon precursor for a second period of time to form a second layer comprising silicon and a metal, where in the first layer and the second layer form the dielectric layer.