The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Apr. 26, 2010
Applicants:
Vincent Renard, La Buisse, FR;
Vincent Jousseaume, Le Sappey en Chartreuse, FR;
Michael Jublot, Nevoy, FR;
Inventors:
Vincent Renard, La Buisse, FR;
Vincent Jousseaume, Le Sappey en Chartreuse, FR;
Michael Jublot, Nevoy, FR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/443 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to a method for fabricating silicon and/or germanium nanowires on a substrate, comprising a step of bringing a precursor comprising silicon and/or a precursor comprising germanium into contact with a compound comprising copper oxide present on the said substrate, by means of which growth of nanowires takes place.
Renard, Vincent. (2013). Method for fabricating silicon and/or germanium nanowires (U.S. Patent No. 8507381). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8507381
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile