The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Dec. 21, 2009
Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates
Andrew G. Norman, Evergreen, CO (US);
Aaron J. Ptak, Littleton, CO (US);
Andrew G. Norman, Evergreen, CO (US);
Aaron J. Ptak, Littleton, CO (US);
Alliance for Sustainable Energy, LLC, Golden, CO (US);
Abstract
Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a') that is related to the substrate lattice parameter (a). The lattice parameter (a′) maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices.