The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Jan. 18, 2012
Su-hui Lin, Xiamen, CN;
Sheng-hsien Hsu, Xiamen, CN;
Kang-wei Peng, Xiamen, CN;
Jiansen Zheng, Xiamen, CN;
Jyh-chiarng Wu, Xiamen, CN;
Keehuang Lin, Xiamen, CN;
Su-Hui Lin, Xiamen, CN;
Sheng-Hsien Hsu, Xiamen, CN;
Kang-Wei Peng, Xiamen, CN;
Jiansen Zheng, Xiamen, CN;
Jyh-Chiarng Wu, Xiamen, CN;
Keehuang Lin, Xiamen, CN;
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Abstract
The present invention discloses a method for lift-off of an LED substrate. By eroding the sidewall of a GaN epitaxial layer, cavity structures are formed, which may act in cooperation with a non-fully filled patterned sapphire substrate from epitaxial growth to cause the GaN epitaxial layer to separate from the sapphire substrate. The method according to an embodiment of the present invention can effectively reduce the dislocation density in the growth of a GaN-based epitaxial layer; improve lattice quality, and realize rapid lift-off of an LED substrate, and has the advantages including low cost, no internal damage to the GaN film, elevated performance of the photoelectric device and improved luminous efficiency.