The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Dec. 29, 2011
Youcun HU, Shanghai, CN;
Lei LI, Shanghai, CN;
Chaos Zhang, Shanghai, CN;
Feng Ji, Shanghai, CN;
Yuwen Chen, Shanghai, CN;
Youcun Hu, Shanghai, CN;
Lei Li, Shanghai, CN;
Chaos Zhang, Shanghai, CN;
Feng Ji, Shanghai, CN;
Yuwen Chen, Shanghai, CN;
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Abstract
A method of manufacturing high performance metal-oxide-metal capacitor device that resolves problems with implementing high capacitance in the metal-oxide-metal region by filling with a low-k material both in the metal-oxide-metal region and the metal interconnection region, utilizing performing selective photolithography and etching of the first dielectric layer to define metal-oxide-metal (MOM for short) region, and filling the MOM region with high dielectric constant (high-k) material to realize a high performance MOM capacitor.