The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2013

Filed:

Apr. 17, 2012
Applicants:

Min-chul Shin, Yongin, KR;

Do-young Kim, Yongin, KR;

Yun-gyu Lee, Yongin, KR;

Jong-moo Huh, Yongin, KR;

Inventors:

Min-Chul Shin, Yongin, KR;

Do-Young Kim, Yongin, KR;

Yun-Gyu Lee, Yongin, KR;

Jong-Moo Huh, Yongin, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a display device includes forming a buffer layer on a top surface of a substrate, forming an amorphous silicon layer on a top surface of the buffer layer, and forming a polysilicon layer by irradiating the amorphous silicon layer with a laser beam. A plurality of first protrusions are formed on the top surface of the polysilicon layer, and a plurality of second protrusions are formed on a surface of the buffer layer by transferring the shape of the polysilicon layer to the buffer layer. A gate insulator on the buffer layer is then formed in the shape of bumps of the second protrusions.


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