The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
May. 07, 2010
Hiroomi Miyahara, Tokyo, JP;
Saneyuki Goya, Tokyo, JP;
Satoshi Sakai, Tokyo, JP;
Tatsuyuki Nishimiya, Tokyo, JP;
Hiroomi Miyahara, Tokyo, JP;
Saneyuki Goya, Tokyo, JP;
Satoshi Sakai, Tokyo, JP;
Tatsuyuki Nishimiya, Tokyo, JP;
Mitsubishi Heavy Industries, Ltd., Tokyo, JP;
Abstract
An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit.