The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Jun. 15, 2011
Gregory M. Kimball, Pasadena, CA (US);
Marty W. Degroot, Midland, MI (US);
Nathan S. Lewis, La Canada, CA (US);
Harry A. Atwater, South Pasadena, CA (US);
Gregory M. Kimball, Pasadena, CA (US);
Marty W. DeGroot, Midland, MI (US);
Nathan S. Lewis, La Canada, CA (US);
Harry A. Atwater, South Pasadena, CA (US);
Dow Global Technologies LLC, Midland, MI (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
The present invention relates to devices, particularly photovoltaic devices, incorporating Group IIB/VA semiconductors such phosphides, arsenides, and/or antimonides of one or more of Zn and/or Cd. In particular, the present invention relates to methodologies, resultant products, and precursors thereof in which electronic performance of the semiconductor material is improved by causing the Group IIB/VA semiconductor material to react with at least one metal-containing species (hereinafter co-reactive species) that is sufficiently co-reactive with at least one Group VA species incorporated into the Group IIB/VA semiconductor as a lattice substituent (recognizing that the same and/or another Group VA species also optionally may be incorporated into the Group IIB/VA semiconductor in other ways, e.g., as a dopant or the like).