The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Apr. 10, 2012
Yusuke Yoshizumi, Itami, JP;
Yohei Enya, Itami, JP;
Takashi Kyono, Itami, JP;
Takamichi Sumitomo, Itami, JP;
Nobuhiro Saga, Osaka, JP;
Masahiro Adachi, Osaka, JP;
Kazuhide Sumiyoshi, Osaka, JP;
Shinji Tokuyama, Osaka, JP;
Shimpei Takagi, Osaka, JP;
Takatoshi Ikegami, Itami, JP;
Masaki Ueno, Itami, JP;
Koji Katayama, Osaka, JP;
Yusuke Yoshizumi, Itami, JP;
Yohei Enya, Itami, JP;
Takashi Kyono, Itami, JP;
Takamichi Sumitomo, Itami, JP;
Nobuhiro Saga, Osaka, JP;
Masahiro Adachi, Osaka, JP;
Kazuhide Sumiyoshi, Osaka, JP;
Shinji Tokuyama, Osaka, JP;
Shimpei Takagi, Osaka, JP;
Takatoshi Ikegami, Itami, JP;
Masaki Ueno, Itami, JP;
Koji Katayama, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer.