The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2013
Filed:
Jun. 28, 2011
Masahiro Osugi, Fremont, CA (US);
Guanghong Luo, Fremont, CA (US);
Ronghui Zhou, Fremont, CA (US);
Danning Yang, Fremont, CA (US);
Dujiang Wan, Fremont, CA (US);
Ming Jiang, San Jose, CA (US);
Masahiro Osugi, Fremont, CA (US);
Guanghong Luo, Fremont, CA (US);
Ronghui Zhou, Fremont, CA (US);
Danning Yang, Fremont, CA (US);
Dujiang Wan, Fremont, CA (US);
Ming Jiang, San Jose, CA (US);
Western Digital (Fremont), LLC, Fremont, CA (US);
Abstract
A method and system for fabricating a read sensor on a substrate for a read transducer is described. A read sensor stack is deposited on the substrate. A mask is provided on the on the read sensor stack. The mask has a pattern that covers a first portion of the read sensor stack corresponding to the read sensor, covers a second portion of the read sensor stack distal from the read sensor, and exposes a third portion of the read sensor stack between the first and second portions. The read sensor is defined from the read sensor stack. A hard bias layer is deposited. An aperture free mask layer including multiple thicknesses is provided. A focused ion beam scan (FIBS) polishing step is performed on the mask and hard bias layers to remove a portion of the mask and hard bias layers based on the thicknesses.