The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8506704 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 13, 2013

Filed:

Mar. 18, 2005
Applicants:

Christian Belouet, Sceaux, FR;

Claude Remy, Limonest, FR;

Inventors:

Christian Belouet, Sceaux, FR;

Claude Remy, Limonest, FR;

Assignee:

SOLARFORCE, Limonest, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention relates to a method of fabricating at least one polycrystalline silicon plate () with one () of its two faces presenting predetermined relief, in which method a layer of polycrystalline silicon () is deposited on at least one () of the two faces of a support (). The method comprises the steps of embossing said face () of the support () to impart thereto a shape that is complementary to said relief; depositing said polycrystalline silicon layer () on said embossed face () of the support (), the surface (or) of said polycrystalline silicon layer situated in contact with said embossed face (or) then taking on the shape of said relief; and eliminating said support in order to obtain said polycrystalline silicon plate (or). The invention is applicable to fabricating solar cells.


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