The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Sep. 08, 2011
Kuang-yu Hsu, Taoyuan County, TW;
Kuang-Yu Hsu, Taoyuan County, TW;
AMICCOM Electronics Corporation, Hsinchu Science Park, Hsin-Chu, TW;
Abstract
A high efficiency driving circuit includes a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, a first N-type metal-oxide-semiconductor transistor, a second N-type metal-oxide-semiconductor transistor, a current source, a third N-type metal-oxide-semiconductor transistor, a fourth N-type metal-oxide-semiconductor transistor, a fifth N-type metal-oxide-semiconductor transistor, a first resistor, and a second resistor. The first P-type metal-oxide-semiconductor transistor charges a third terminal of the first P-type metal-oxide-semiconductor transistor according to a first control signal, and the first N-type metal-oxide-semiconductor transistor discharges the third terminal of the first P-type metal-oxide-semiconductor transistor according to a second control signal. A high voltage level of the first control signal is at a first voltage, and a low voltage level of the first control signal is at a third voltage; a high voltage level of the second control signal is at a fourth voltage, and a low voltage level of the second control signal is ground.