The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Nov. 17, 2011
Rashmi Jha, Toledo, OH (US);
Jorhan Ordosgoitti, Toledo, OH (US);
Branden Long, Toledo, OH (US);
The University of Toledo, Toledo, OH (US);
Abstract
A nanoelectric memristor device includes a first electrode and a layer of oxygen-vacancy-rich metal oxide deposited upon a surface of the first electrode. A layer of oxygen-rich/stochiometric metal oxide is deposited upon a surface of the oxygen-vacancy-rich metal oxide layer that is opposite from said first electrode. At least one of the oxygen-vacancy-rich metal oxide and oxygen-rich/stochiometric metal oxide layers is doped with one of a magnetic and a paramagnetic material. A second electrode is adjacent to a surface of the oxygen-rich/stochiometric metal oxide layer that is opposite from the oxygen-rich/stochiometric metal oxide layer.