The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Dec. 22, 2009
Yusuke Kawaguchi, Miura-gun, JP;
Norio Yasuhara, Kawasaki, JP;
Tomoko Matsudai, Tokyo, JP;
Kenichi Matsushita, Tokyo, JP;
Yusuke Kawaguchi, Miura-gun, JP;
Norio Yasuhara, Kawasaki, JP;
Tomoko Matsudai, Tokyo, JP;
Kenichi Matsushita, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A body layer of a first conductivity type is formed on a semiconductor substrate, and a source layer of a second conductivity type is formed in a surface region of the body layer. An offset layer of the second conductivity type is formed on the semiconductor substrate, and a drain layer of the second conductivity type is formed in a surface region of the offset layer. An insulating film is embedded in a trench formed in the surface region of the offset layer between the source layer and the drain layer. A gate insulating film is formed on the body layer and the offset layer between the source layer and the insulating film. A gate electrode is formed on the gate insulating film. A first peak of an impurity concentration profile in the offset layer is formed at a position deeper than the insulating film.