The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Mar. 19, 2012
Kazuaki Yamaura, Kanagawa-ken, JP;
Kazuaki Yamaura, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes a semiconductor substrate and a first semiconductor element provided on the semiconductor substrate. The first semiconductor element includes: a first semiconductor; a second semiconductor layer; a third semiconductor layer; a first insulating layer; a first base region; a first source region; a first gate electrode; a first drift layer; a first drain region; a first source; and a first drain electrode. A concentration of an impurity element of the first conductivity type included in the first drift layer is lower than a concentration of an impurity element of the first conductivity type included in the first semiconductor layer. The concentration of the impurity element of the first conductivity type included in the first drift layer is higher than a concentration of an impurity element of the first conductivity type included in the second semiconductor layer.