The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Jun. 11, 2009
Ken Suzuki, Kyoto, JP;
Jun Suzuki, Kyoto, JP;
Ken Suzuki, Kyoto, JP;
Jun Suzuki, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes an isolation region () formed in a semiconductor substrate (), an active region made of the semiconductor substrate () surrounded by the isolation region () and having a trench portion, a MIS transistor of a first-conductivity type having a gate electrode () formed on the active region, a first sidewall () formed on a side surface of the gate electrode between the gate electrode () and the trench portion as viewed in the top, and a silicon mixed crystal layer () of the first-conductivity type, the trench portion being filled with the silicon mixed crystal layer () of the first-conductivity type, a substrate region provided between the trench portion and the isolation region () and made of the semiconductor substrate (), and an impurity region () of the first-conductivity type formed in the substrate region. The silicon mixed crystal layer () generates stress in a channel region of the active region.