The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Apr. 06, 2012
Kurt Matoy, Strau, AT;
Thomas Detzel, Villach, AT;
Michael Nelhiebel, Villach, AT;
Arno Zechmann, Villach, AT;
Stefan Decker, Munich, DE;
Robert Illing, Villach, AT;
Sven Gustav Lanzerstorfer, Feldkirchen, AT;
Christian Djelassi, Villach, AT;
Bernhard Auer, Millstatt, AT;
Stefan Woehlert, Villach, AT;
Kurt Matoy, Strau, AT;
Thomas Detzel, Villach, AT;
Michael Nelhiebel, Villach, AT;
Arno Zechmann, Villach, AT;
Stefan Decker, Munich, DE;
Robert Illing, Villach, AT;
Sven Gustav Lanzerstorfer, Feldkirchen, AT;
Christian Djelassi, Villach, AT;
Bernhard Auer, Millstatt, AT;
Stefan Woehlert, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
Power transistor cells are formed in a cell array of an integrated circuit. Contact vias may electrically connect a metal structure above the cell array and the power transistor cells. A connecting line electrically connects a first element arranged in the cell array and a second element arranged in a peripheral region. A portion of the connecting line is arranged between the metal structure and the cell array and runs between a first axis and a second axis which are arranged parallel and at a distance to each other. The distance is greater than a width of the connecting line portion. The connecting line portion is tangent to both the first axis and the second axis. Shear-induced material transport along the connecting line is reduced by shortening critical portions or by exploiting grain boundary effects. The reliability of an insulator structure covering the connecting line is increased.