The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Aug. 11, 2011
Applicant:
Rongwei Yu, Chengdu, CN;
Inventor:
Rongwei Yu, Chengdu, CN;
Assignee:
IPGoal Microelectronics (SiChuan) Co., Ltd., Chengdu, Sichuan Province, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
A LDMOS structure includes a gate, a source, a drain and a bulk. The gate includes a polycrystalline silicon layer, the source includes a P-implanted layer, the drain includes the P-implanted layer, a P-well layer, and a deep P-well layer. A bulk terminal is connected through the P-implanted layer, the P-well layer, the deep P-well layer, and a P-type buried layer to the bulk. The LDMOS structure is able to be produced without any extra masking step, and it has compact structure, low on-resistance, and is able to withstand high current and high voltage.